| 摘要 |
<p>PURPOSE:To reduce a resistance of a data line by accumulating a second conductor film, and working it to a shape of a scanning line containing a gate electrode of a thin film transistor, and a shape which comes into contact onto a data line made by a first conductor in a state that it is not connected to the scanning line and becomes a part of the data line. CONSTITUTION:A two-layer film area 103 constitutes an active area of a TFT 3 by connecting a source 5 and a drain 6, and also, has a function of insulation even with respect to an intersection area 7 of a data line 1 and a scanning line 2, and consists of a larger plane shape than width of the data line 1 and the scanning line 2. Also, a second conductor 105 is overlapped partially to the source 5 and the drain 6, in a wider plane shape than an interval of the source 5 and the drain 6, between the source 5 and the drain 6, and becomes the scanning line 2 containing a gate electrode of the TFT 3, and also, the second conductor 105 is constituted so as to become a part of the data line 1 by coming into contact onto the data line 1 which becomes the first conductor 102 in a state that it is not connected to the scanning line 2. In such a way, the resistance of the data line 1 can be lowered.</p> |
