发明名称 SEMICONDUCTOR DISPLACEMENT TRANSDUCER
摘要 PURPOSE:To increase accuracy of a transducer by restricting the density ratio of Ge not more than 12wt % to Au in an alloy solder that is used to combine a strain detecting body with a strain transfering element, thus maintaining uniform soldering. CONSTITUTION:A semiconductor strain detecting body 16 has a strain sensing area 13 in the first main surface 12 of a single semiconductor crystal 11 and an insulating layer 15 on the second main surface 14 which is located in the same way as the surface 12. A strain transferring element 17 is made of an elastic metal. A solder layer 18 is made of an alloy. The semiconductor strain detecting body 16 and the strain transfer element 17 are integrated with a laminated body of the solder layer 18 and an intermediate metal layer 19 to constitute a displacement transducer. An Au - Ge alloy is used in the alloy solder layer 18 to enable soldering at low temperature and the range of the density ratio of Ge to Au in the solder is set to be not more than 12wt % in order to maintain uniform soldering. As a result, a uniform solder layer, without allowing precipitation of particles which have highly concentrated Ge, is obtained.
申请公布号 JPS559406(A) 申请公布日期 1980.01.23
申请号 JP19780080991 申请日期 1978.07.05
申请人 HITACHI LTD 发明人 KURIHARA YASUTOSHI;YATSUNO KOUMEI
分类号 H01L21/52;H01L21/58;H01L29/84 主分类号 H01L21/52
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