| 摘要 |
PURPOSE:To improve the characteristics such as low contact resistance by providing the silicon powder including the same conductivity type of impurities as that of a semiconductor chip between the chip and a header upon joining the chip with the header by a Au-Si eutectic technique. CONSTITUTION:The epitaxial growth of a n-type layer 3 is first allowed to proceed on a p-type Si substrate 2 to isolate the layer 3 by a p-type region 2'; then p-type gate 4, n-type source 5 and drain region 6 are provided in the isolated region; and the back of the substrate 2 is etched to remove the high impurity content layer. Prior to joining the chip 1 made in this way with the header 7 conprising Kovar 8 and Au layer 9 coated thereon, the high concentration boron doped silicon powder 10 is coated on the layer 9. In this manner, boron segregates to provide a low electric resistance layer to the side of the substrate 2 resulting in low contact resistance. |
