发明名称 |
X-ray lithography |
摘要 |
X-ray lithographic systems as heretofore constructed include a low-attenuation chamber for propagating x-rays from a source toward a mask member that is positioned in close proximity to a resist-coated wafer. Both the mask and the wafer are included in the chamber which typically is either filled with helium or evacuated to a pressure less than about 10-2 Torr. In accordance with this invention, an x-ray lithographic system is constructed to enable establishment in the wafer-to-mask region of a controlled atmosphere that is separate and distinct from that maintained in the low-attenuation chamber. In this way, an improved lithographic system with advantageous throughput and other characteristics is realized.
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申请公布号 |
US4185202(A) |
申请公布日期 |
1980.01.22 |
申请号 |
US19770857380 |
申请日期 |
1977.12.05 |
申请人 |
BELL TELEPHONE LABORATORIES INC |
发明人 |
DEAN, ROBERT E;MAYDAN, DAN;MORAN, JOSEPH M;TAYLOR, GARY N |
分类号 |
H01L21/30;G03F7/20;G21K5/02;(IPC1-7):A61K27/02;A61N5/00;C08J1/02;G21G5/00 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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