| 摘要 |
An opto-electronic sensor has an insulating substrate on which a plurality of x-lines of doped n (p) type conductivity semiconductor material are arranged. A light-permeable insulating layer covers the x-lines. A plurality of y-lines of electrically conductive material are then arranged over the insulating layer transversely to the x-lines. Sensor elements are formed at the crossover points of the x- and y-lines. A partial region of opposite conductivity type light sensitive material is arranged adjacent the x-line and beneath the y-line at the crossover point. This partial region forms a barrier-layer effect at a junction of the partial region with the doped semiconductor material of the x-lines.
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