| 发明名称 |
WERKWIJZE VOOR DE VERVAARDIGING VAN VELDEFFECTTRANSIS- TOREN MET GEISOLEERDE STUURELEKTRODE. |
| 摘要 |
A semiconductor device wherein a polycrystalline silicon layer, conductively in contact with a source region and a drain region and having impurities of the same conductivity type as that of said source region and said drain region, is the lead out electrode of said source region and said drain region. The method of forming said semiconductor devices is also disclosed. |
| 申请公布号 |
NL161306(C) |
申请公布日期 |
1980.01.15 |
| 申请号 |
NL19720007071 |
申请日期 |
1972.05.25 |
| 申请人 |
FUJITSU LIMITED, KAWASAKI, JAPAN. |
发明人 |
|
| 分类号 |
H01L21/225;H01L21/285;H01L21/316;H01L23/485;H01L29/00;(IPC1-7):01L29/78 |
主分类号 |
H01L21/225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
