METHOD OF PRODUCING A SEMICONDUCTOR ARRANGEMENT

摘要

C A N A D A A process for producing a semiconductor device in a silicon crystal in which a first part area of the crystal surface is covered with a silicon nitride layer and a second part area adjacent thereto with a silicon dioxide layer, and the crystal is thereafter locally doped using a doping mask produced by means of a photo-lacquer layer covering a part of the silicon dioxide layer and at least a part of the silicon nitride layer. The application of the process to the production of planar and mesa transistors is described. The doping may be effected by diffusion or ion-implantation.