发明名称 |
Method and apparatus for producing diamond thin films |
摘要 |
The present invention concerns a method of producing a diamond thin film. A plasma-activated gas, obtained by exciting a starting material containing a carbon source gas, is brought into contact with a surface of a substrate, on which a diamond thin film is to be formed under the presence of an auxiliary member placed adjacent to a protruded portion present at the surface of the substrate. The diamond thin film is thereby formed on the substrate. An apparatus for producing a diamond thin film by means of a microwave plasma method has an auxiliary member placed adjacent to a protruded portion present at the surface of the substrate on which the diamond thin film is to be formed.
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申请公布号 |
US5258206(A) |
申请公布日期 |
1993.11.02 |
申请号 |
US19910813041 |
申请日期 |
1991.12.23 |
申请人 |
IDEMITSU PETROCHEMICAL CO., LTD. |
发明人 |
HAYASHI, NARIYUKI;ITO, TOSHIMICHI |
分类号 |
C23C16/27;C23C16/458;C30B25/12;(IPC1-7):B05D3/06;B01J3/06 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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