| 摘要 |
PURPOSE:To oscillate high-brightness light from violet to ultraviolet range by laminating II-VI compound semiconductor layers containing Zn, Cd and S on a GaAs substrate with the lattice constant of the substrate being almost equal to that of GaAs. CONSTITUTION:An n-type GaAs buffer layer 2, an n-type (ZnxCd1-x)1-yMgyS layer 3 (0<x<1, 0<=y<1), a p-type (ZnnCd1-n)1-vMgvS layer 4 (0<u<1, 0<=v<1) and a p-type GaAs contact layer 5 are laminated and formed on an n-type GaAs substrate 1. These ZnCdS-based semiconductors are able to provide a lattice constant which almost coincides with the lattice constant of GaAs in the range of mixed crystal ratio where violet to ultraviolet light is oscillated, so that semiconductor light emitting elements can be produced by using high- quality GaAs substrate. Also, in the range of violet to ultraviolet, a light of ultraviolet region can be oscillated from high-brightness violet at a high efficiency. |
