发明名称 |
Semiconductor integrated memory circuit. |
摘要 |
A semiconductor integrated circuit device for use as a memory cell array including a number of integrated injection logic memory cells (Cen) arranged along a path includes current sources (Q7 and Q8) at both ends of the path. Further current sources (Q9) may be provided in the middle of the path.
<??>The provision of more than one current source for each path ensures that the write injection current characteristics of all the cells in the path are substantially the same.
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申请公布号 |
EP0006702(A1) |
申请公布日期 |
1980.01.09 |
申请号 |
EP19790301092 |
申请日期 |
1979.06.08 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION;FUJITSU LIMITED |
发明人 |
SUZUKI, MASAO;HAYASHI, TOSHIO;KAWARADA, KUNIYASU;TOYODA, KAZUHIRO;ONO, CHIKAI |
分类号 |
G11C5/06;G11C11/411;G11C11/415;H01L21/3205;H01L21/822;H01L21/8226;H01L23/52;H01L27/04;H01L27/082;H01L27/102;(IPC1-7):H01L27/02;G11C11/40 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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