发明名称 Semiconductor integrated memory circuit.
摘要 A semiconductor integrated circuit device for use as a memory cell array including a number of integrated injection logic memory cells (Cen) arranged along a path includes current sources (Q7 and Q8) at both ends of the path. Further current sources (Q9) may be provided in the middle of the path. <??>The provision of more than one current source for each path ensures that the write injection current characteristics of all the cells in the path are substantially the same.
申请公布号 EP0006702(A1) 申请公布日期 1980.01.09
申请号 EP19790301092 申请日期 1979.06.08
申请人 NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION;FUJITSU LIMITED 发明人 SUZUKI, MASAO;HAYASHI, TOSHIO;KAWARADA, KUNIYASU;TOYODA, KAZUHIRO;ONO, CHIKAI
分类号 G11C5/06;G11C11/411;G11C11/415;H01L21/3205;H01L21/822;H01L21/8226;H01L23/52;H01L27/04;H01L27/082;H01L27/102;(IPC1-7):H01L27/02;G11C11/40 主分类号 G11C5/06
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