发明名称 METHOD FOR BONDING SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To shorten the heat treatment time required for bonding a semiconductor device, while forming bonding layer of uniform composition. CONSTITUTION:A solder material 3 is three-layer structure where low melting point solder is stuck to both sides of high melting point solder, and pressure and heat are applied to help the diffusion from the low melting point solder to high melting point solder. Moreover, the bonding layer after diffusion is made a minute area in the vicinity of interface, and the bonding member is constituted so that the junction layers may have a gradient composition, whereby heat treatment time is shortened, and a uniform layer can be obtained.
申请公布号 JPH0661277(A) 申请公布日期 1994.03.04
申请号 JP19920208883 申请日期 1992.08.05
申请人 RYODEN SEMICONDUCTOR SYST ENG KK;MITSUBISHI ELECTRIC CORP 发明人 ASAI KATSUNORI;TOMITA YOSHIHIRO;ICHIYAMA HIDEYUKI;OMAE SEIZO
分类号 H01L21/52 主分类号 H01L21/52
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