| 摘要 |
Sintered silicon nitride articles are prepared from a silicon nitride compact by forming a silicon powder containing one or more sintering additives for silicon nitride into a compact having at density of at least 1.3 g/cm3, said additives being present in the powder in an amount such as to ensure an additive content of from 0.5 to 20 wt. % in the silicon nitride compact, nitriding the silicon compact by heating under nitrogen gas blanket at a temperature not exceeding 1500 DEG C., to convert said silicon into reaction bonded silicon nitride, and sintering the reaction bonded silicon nitride compact by heating in a nitrogen gas atmosphere at a temperature of at least 1500 DEG C. |
