发明名称 |
SEMICONDUCTOR ELEMENT AND POWER CONVERTER |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element for improving the contact efficiency of a heat buffer plate and a semiconductor substrate and the contact efficiency of the heat buffer plate and an electrode and a power converter provided with the semiconductor element. SOLUTION: In the case of turning the material/composition of the heat buffer plate 3 held between the semiconductor substrate 2 and an electrode body 4 to an Mo-Cu alloy, when a Cu amount is 1-50 volume %, preferable temperature characteristics with less dispersion are indicated. Also, it is recognized that the contact of a pressurization surface is distributed to the almost entire surface by the presence of a Cu layer on the surface. Thus, by imparting the surface Cu layer to the buffer plate made of Mo and continuously integrating Cu in the heat buffer plate and the Cu in the surface Cu layer further, the preferable temperature characteristics are obtained and the reliability of this semiconductor element and the power converter is improved. |
申请公布号 |
JPH11251338(A) |
申请公布日期 |
1999.09.17 |
申请号 |
JP19980046441 |
申请日期 |
1998.02.27 |
申请人 |
SHIBAFU ENGINEERING KK;TOSHIBA CORP |
发明人 |
OKUTOMI ISAO;KUSANO TAKASHI;KIJIMA KENJI;YAMAMOTO ATSUSHI;SEKI KEISEI;ISHIWATARI YUTAKA;KIMOTO ATSUSHI |
分类号 |
H01L25/07;H01L21/52;H01L25/18;(IPC1-7):H01L21/52 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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