发明名称 MANUFACTURE OF LIGHT-EMITTING DIODE
摘要 PURPOSE:To obtain a shape of a convex lens by means of a simple treatment by a method wherein one surface of an InP substrate is shaped to be a shape that two or more cylinders whose diameters are gradually reduced nearly coincide with their center and are piled up, this substrate is heat-treated in a hydrogen atmosphere containing a vapor of phosphorus and, after that, a multilayer structure composed of InP/InGaAsP is formed on the other surface of the substrate. CONSTITUTION:One surface of an InP substrate is shaped to be a shape that two or more cylinders whose diameters are gradually reduced nearly coincide with their center and are piled up. Then, said InP substrate 1 is heat-treated in a hydrogen atmosphere containing a vapor of phosphorus. Then, a multilayer structure composed of InP and InGaAsP is formed on the other surface of said InP substrate 1. For example, a selective etching operation is repeated on one surface of an InP substrate 1 by using an SiO2 film 16 as a mask; a step-shaped protruding part is formed. Then, this assembly is heat-treated at 800 deg.C for two hours in a hydrogen atmosphere having a vapor pressure of phosphorus; a partially spherical protruding part 18 is formed. After that, a liquid phase epitaxy operation is executed to the other surface of the substrate 1; necessary electrodes 5, 7 are formed; an LED provided with a lens is formed.
申请公布号 JPH01302873(A) 申请公布日期 1989.12.06
申请号 JP19880133650 申请日期 1988.05.31
申请人 FUJITSU LTD 发明人 TANAHASHI TOSHIYUKI
分类号 H01L21/208;H01L33/20;H01L33/30 主分类号 H01L21/208
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