| 摘要 |
PURPOSE:To prevent the coupling of the static capacity between a wiring and an element by forming the same conductive-type region as the opposite conductive type surrounding the collector region in the collector region provided with the base and the emitter regions and providing electrodes on this formed region through an insulating film. CONSTITUTION:N-type layer 11 is epitaxially grown on P-type Si substrate 18 and is separated into island regions 11, which become plural collector regions, by P-type region 17, and P-type base region 12 is formed in region 11 by diffusion, and N-type emitter region 13 is formed in region 12 by diffusion. Next, P-type region 19 extending to the outside of region 11 is provided apart from region 12 in island region 11 and is brought into contact with region 17, and a potential equal to region 17 is given to region 19, and region 19 is held at a minimum potential. After that, oxide film 16 is caused to adhere onto all the surface, and windows are provided. Then, metallic wiring 14 is caused to adhere to regions 11, 12 and 13 respectively, and metallic wiring 15 which should be connected to another element is fitted onto region 19 through film 16. Thus, constitution is given as if a shield plate were put between wiring 15 and region 11, thereby preventing the coupling of the static capacity between the wiring and the element. |
