| 摘要 |
PURPOSE:To realize the negative resistance performance between the pn junctions with the greatness of back bias in connection with the P type layer, by providing the P type layer at a part of the N type Si substrate surface and providing the electrode bridging the P type layer partly via the insulation film. CONSTITUTION:The P type layer 22 is placed on a part of the N type Si substrate 21 surface, phosphorus ions are implanted by a suitable amount N1 to the deep region of the surface A1 near the pn junction, and B ions are implanted by a suitable amount N2<N1 to shallow region. Via the insulation film 23, the electrode 24 bridging partly to the P type layer is provided to connect it with the P type layer. Since the surface potential is formed higher in the order of the layer 22, region A2, and region A1 with ion injection, when the back bias is increased, the inversion layer 26 of P channel is caused only to the region A2 in the depletion layer, to reduce the area of depletion and current and to block the charge flowing to the layer 22 by the potential barrier of the region A1. Further, when the bias is increased, the current to the layer 22 is almost normal reverse current. This negative resistance element is extrmely less in the current value, the power consumption is small and integration is easier. |
