| 摘要 |
The silicon is heated to a high temperature above 800 deg.C for a certain period, according to which the quality of the device is a function of the absence of crystallographic deformations and/or dislocations at the limits of the silicon. The temperature of the device is increased from 800 deg.C following a cyclic increase in temperature lower than 200 deg.C per minute up to the high temperature for the required period. Then the temperature is lowered following a cyclic decrease of less than 200 deg.C per minute down to 800 deg.C. The heating and cooling cycles above 800 deg.C are repeated several times. |
