发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To reduce greatly the power consumption at the non-operation time by applying the current control signals to the base terminal of the current control bipolar transistor to control the conduction and non-conduction of the transistor. CONSTITUTION:In the inverter circuit featuring the power-down function obtained through combination of npn-type dipolar transistor Tr11 and N-channel MOSTr12, current control signal phi is applied to base terminal 12 of Tr11. Thus, inverse output V0of input voltage V1 is obtained when signal phi is ''H'', and consumption current ICC' flows only when V1 is ''H''. On the other hand, signal phi is turned to ''L'' to make Tr11 non-conducting (non-operation time and power-down state), and thus current ICC becomes zero. Also, in this case, Tr11 is non-conducting, and accordingly V0 turns to ''L'' when V1 is ''H'' and both Tr11 and 12 become non-conductive when V1 is ''L''. As a result, VO features a high impedance with no normal output obtained.
申请公布号 JPS54152852(A) 申请公布日期 1979.12.01
申请号 JP19780061976 申请日期 1978.05.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OOSONE TAKASHI
分类号 H03K19/08;H03K17/567;H03K19/0944 主分类号 H03K19/08
代理机构 代理人
主权项
地址