| 摘要 |
PURPOSE:To obtain a device where a high-dielectric-strength linear IC and a high- speed I<2>L both coexist, by making epitaxial-layer thickness between the I<2>L part and linear IC part. CONSTITUTION:The (100) surface of p-type Si substrate is etched anisotropically to form concave part 12 with high precision. Through selective diffusion, n<+> layers 2 and 14 are provided and a n-type epitaxial layer is stacked to make flat n layer 4. Then, n layer 4 is separated by p<+> layer into layers 4A and 4B and collector lead- out n<+> layer 11 is formed which connects to layer 14. Next, p<+> layers 6 and 7, and 9 are formed in layers 4A and 4B respectively and n<+> collector 8 of the I<2>L and n<+> emitter 10 of the linear IC are formed, so that the device will be completed. In this constitution, the epitaxial layers at the I<2>L and linear IC sides can freely be controlled with high precision, selecting the adequate specific resistance of epitawial layers obtain a high-dielectric-strength linear IC, and a high-speed I<2>L can also be obtained by increasing current amplification factor beta of the I<2>L. Further, forming the concave part deeply makes epitaxial layers thin to decrease the required diffusion depth, so that it will be effective in terms of an increase of the degree of integration. |
