| 摘要 |
PURPOSE:To reduce the serial resistance of the element by epitaxial-growing in lamination the active layer and the layer featuring a lower specific resistance than the semiconductor substrate of a low specific resistance onto the semiconductor substrate to be then covered with the insulator layer and then providing the opening to form the electrode touching the active layer. CONSTITUTION:Layer 6 featuring a low specific resistance with the impurity density of 5 X 10<18> atom/cm<3> plus active layer 2 featuring the impurity density of 1.2 X 10<17> atom/cm<3> are laminated onto semiconductor substrate 1 featuring a higher specific resistance than layer 6 with impurity density of 2 X 10<18> atom/cm<3> in the liquid-phase or vapor epitaxial growing method. Then the back of substrate 1 is polished to reduce its thickness to coat ohmic electrode 5 there, and layer 2 is covered with insulator layer 3 with a hole drilled. The etching is applied through this hole to decrease the thickness of layer 2 to attach electrode 4 there, thus the Schottky barrier being caused between layer 2 and electrode 4. As a result, the conversion loss can be reduced when the low frequency signals are drawn out. |
