| 摘要 |
PURPOSE:To lessen the manufacturing cost of a solar cell by providing characters, numerals, symbols, patterns, etc., within the limits of needed processes. CONSTITUTION:At the time when P<+>-type layer 102 is formed selectively in N- type silicon substrate 101 by photoetching, the mask of a SiO2 film is made into a desirable pattern. Therefore, P<+>-type layer 102 is of the desirable pattern. When the pattern of this SiO2 is made by photoetching, silicon substrte 102 is slightly etched and an uneven pattern can be obtained. In addition, since the growing speed of SiO2 at an impurity-diffused part differs from that at a undiffused part in an oxidation process, the unevenness of the SiO2 film surface becomes more remarkable. For the purpose, using a fine lattice pattern forms uneven diffraction lattice on the surface of SiO2 105 on the photo detection part, and it can be seen coloring when light strikes. |
