发明名称 Magnetic bubble memory devices
摘要 In a magnetic bubble memory device, positive signal lines interconnecting a magnetic bubble memory chip located at substantially the center of an insulating substrate and lead pins at the end of the substrate are surrounded by a plurality of grounded conductors for shielding the positive signal lines so as to decrease noise induced therein by a voltage drop across coils for producing the rotating magnetic field.
申请公布号 US4175288(A) 申请公布日期 1979.11.20
申请号 US19780880586 申请日期 1978.02.23
申请人 HITACHI LTD 发明人 FUTAMI, TOSHIO;OHTA, HIROFUMI;UMEYAMA, KAZUO
分类号 G11C11/14;G11C19/08;(IPC1-7):G11C19/08 主分类号 G11C11/14
代理机构 代理人
主权项
地址