| 摘要 |
PURPOSE:To obtain a high-speed semiconductor switch which excels in the degree of integration, the noise margin degree and the power consumption by connecting the collector of the bipolar transistor featuring the constant-current characteristics to the emitter of the transistor featuring the switching action. CONSTITUTION:The collector of bipolar TrT6 is connected to the emitters of switching TrT4 and T5; fixed voltage Vref' is applied to the base of TrT6; and the collector voltage-current characteristics of TrT6 is set so that constant current IO may flow with the collector voltage higher than a certain level. In such circuit constitution, if at least one of base input voltage Vin5 and Vin6 of TrT4 and T5 exceeds the threshold voltage of Tr, constant current IO flows to TrT6. And the potential of collector Vout of TrT4 and T5 lowers from power voltage VCC down to VCC-IO.R. As a result, the characteristics excelling in the clear threshold voltage and high noise margin degree can be obtained for the relation between the input and output voltage, and with the degree of integration higher than the emitter coupled logic (ECL). |
