| 摘要 |
A manufacturing method of the semiconductor device is provided to prevent the short from being generated between the storage electrode and the bit line by etching the polysilicon layer reclaimed to the contact hole of the storage electrode partially up to the location of the tungsten layer. A bit line pattern is formed on the top of a semiconductor substrate(100) having a lower structure. A first spacer(127) is formed at both sides of the bit line pattern. After the interlayer insulating film is formed on the whole upper side of the semiconductor substrate, the storage electrode contact hole is formed by etching the interlayer insulating film. A polysilicon layer(130) reclaiming the bottom of the storage electrode contact hole is formed. A second spacer(135a) is formed on the surface of the exposed first spacer. After the selective epitaxial growth film(140) is formed on the top of the polysilicon layer, the storage electrode contact plug is formed by reclaiming the contact hole of the storage electrode.
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