| 摘要 |
A metal wiring forming method of a semiconductor device is provided to fill up void with metal materials after exposing void in a following process and form metal wiring and improve a bridge between metal wiring so that operating reliability and yield of a semiconductor device are improved. An insulating layer pattern which is separated with fixed interval on a semiconductor substrate(10) is formed. A spacer is formed in the side wall of the insulating layer pattern. A first insulating layer(16) filling up a spacer interval is formed on the semiconductor substrate. The insulating layer pattern and spacer are removed. A second insulating layer(18) is formed according to the surface of the remained first insulating layer. Metal wiring is formed between the second insulating layers. The insulating layer pattern is formed of an oxide film. The second insulating layer is formed on the semiconductor substrate including the remained first insulating layer and has void(20) between the first insulating layers.
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