发明名称 Piezoelectric crystalline film of zinc oxide and method for making same
摘要 Piezoelectric crystalline film of zinc oxide with a hexagonal crystal structure and a c-axis substantially perpendicular to the film surface, the crystalline film containing, as additive elements, vanadium and manganese together with or without copper. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with good conversion efficiency which can be used in a wide range of low to high frequencies. Such films can be made by a method comprising sputtering source materials, i.e., zinc oxide, vanadium and manganese together with or without copper onto a surface of a substrate to form a crystalline zinc oxide film, the sputtering being effected by using a film material source consisting essentially of a ceramic of zinc oxide containing vanadium, and manganese together with or without copper.
申请公布号 US4174421(A) 申请公布日期 1979.11.13
申请号 US19780940336 申请日期 1978.09.07
申请人 MURATA MANUFACTURING CO LTD 发明人 MASHIO, TASUKU;NISHIYAMA, HIROSHI;OGAWA, TOSHIO
分类号 H01L41/18;H01L41/22;H01L41/316;(IPC1-7):C23C15/00;C04B35/00 主分类号 H01L41/18
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