发明名称 Annealing synthetic diamond type Ib
摘要 Type Ib synthetic diamond crystal is annealed at an annealing temperature ranging from about 1500 DEG C. to about 2200 DEG C. under a pressure which prevents significant graphitization of the diamond during the annealing to convert at least about 20% of the total amount of type Ib nitrogen present in the crystal to type Ia nitrogen.
申请公布号 US4174380(A) 申请公布日期 1979.11.13
申请号 US19770860283 申请日期 1977.12.14
申请人 GENERAL ELECTRIC 发明人 CHRENKO, RICHARD M;STRONG, HERBERT M;TUFT, ROY E
分类号 B01J3/06;C09K3/14;C30B33/00;(IPC1-7):C01B31/06 主分类号 B01J3/06
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