发明名称 |
Annealing synthetic diamond type Ib |
摘要 |
Type Ib synthetic diamond crystal is annealed at an annealing temperature ranging from about 1500 DEG C. to about 2200 DEG C. under a pressure which prevents significant graphitization of the diamond during the annealing to convert at least about 20% of the total amount of type Ib nitrogen present in the crystal to type Ia nitrogen.
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申请公布号 |
US4174380(A) |
申请公布日期 |
1979.11.13 |
申请号 |
US19770860283 |
申请日期 |
1977.12.14 |
申请人 |
GENERAL ELECTRIC |
发明人 |
CHRENKO, RICHARD M;STRONG, HERBERT M;TUFT, ROY E |
分类号 |
B01J3/06;C09K3/14;C30B33/00;(IPC1-7):C01B31/06 |
主分类号 |
B01J3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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