| 摘要 |
PURPOSE:To allow an I<2>L gate and another circuit to coexist effectively by making the active base layer structure, right under the collector of the inverter of a logic circuit part composed of the I<2>L gate, different between the connection part with another circuit and others. CONSTITUTION:Both I<2>L gate G1 and G2 are provided into regions obtained by separating n epitaxial layer 3, provided to p-type Si substrate 1 via n<+> buried layers 21 and 22, by the p<+> layer. The inverter of G1 is of double-base structure and has p<+> external base layer 51 surrounding n<+> collector 61 and p<-> active base layer 81 right under the collector. The inverter at the G2 side, on the other hand, is of single-base structure with n<+> collector layers 62a and 62b provided in p<+> base 52. Then p<+> layers 71 and 72 are injectors and n<+> layers 91 and 92 reach n<+> buried layers 21 and 22 respectively and serve as earth terminals. In the above constitution, the G1 side is able to operate at a high speed with the number of the fan out made large, and the G2 side prevents dielectric strength from lowering due to the punch through. In this way, the coexistence integrated circuit can display its performance sufficiently. |
