Contact for semiconductor devices

摘要

A contact on a surface of a semiconductor device includes a post projecting from the surface of the device and a head on the post. The post has a transverse cross-sectional shape of at least three arms projecting radially from a common center point. The head has a cross-sectional area larger than the transverse cross-sectional area of the post. The post is on the surface of a body of semiconductor material and extends through a layer of an inorganic insulating material, such as an oxide or nitride, on the surface of the body. The post is of a height such that the head is spaced from the inorganic insulating material layer. A layer of an organic insulating material, such as a polyimide or silicone resin, may be provided on the inorganic insulating material layer and around the post to provide additional support for the head.