| 摘要 |
PURPOSE:To obtain a solar battery which is free from the deterioration caused by the heat treatment by forming the solar battery with I-type GaAs substrate, P-type GaAs layer, N-type GaAs layer and N-type GaAlAs layer each and then isolating the battery of such constitution via the N<+>-type region and also securing a serial connection through the P<+>-type region. CONSTITUTION:P-type GaAs layer 2, N-type GaAs layer 3 and N-type GaAlAs layer 4 are epitaxial-grown in lamination onto I-type GaAs substrate 1 to constitute a solar battery, and then belt-formed N-type region 5 containing a large amount of Ga is formed at the fixed region on the solar battery. The heat treatment is then given to diffuse Ga in region 5 up to substrate 1 to form continuous N<+>-type GaAs regin 6a and 6, and furthermore belt-formed P-type doped region 7 adjacent to region 5 is formed. After this, the heat treatment is applied again to form continuous P<+>-type region 7 and 8 reaching layer 2 and along region 6a and 6. And the solar battery is isolated and connected with no intrusion to the GaAs layer and GaAlAs layer, thus obtaining a monolithic structure. |
