| 发明名称 | Method for fabricating semiconductor device | ||
| 摘要 | A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate. | ||
| 申请公布号 | US9373788(B2) | 申请公布日期 | 2016.06.21 |
| 申请号 | US201414185427 | 申请日期 | 2014.02.20 |
| 申请人 | SK Hynix Inc. | 发明人 | Kwon Young Seok;Hong Kwon |
| 分类号 | H01L21/06;H01L45/00;C23C16/30;C23C16/455 | 主分类号 | H01L21/06 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method for fabricating a semiconductor device, the method comprising: supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period; and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate, wherein the periodically interrupting the supplying of the first source gas is repeated at a cycle of 10 to 300 msec for the first time period. | ||
| 地址 | Gyeonggi-do KR | ||