发明名称 TSV structures and methods for forming the same
摘要 A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
申请公布号 US9373575(B2) 申请公布日期 2016.06.21
申请号 US201514607865 申请日期 2015.01.28
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lin Yung-Chi;Chen Hsin-Yu;Chiou Wen-Chih;Yang Ku-Feng;Wu Tsang-Jiuh;Lin Jing-Cheng
分类号 H01L23/48;H01L23/498;H01L21/768;H01L23/00 主分类号 H01L23/48
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A device comprising: a substrate comprising a first surface and a second surface under the first surface; a conductive feature extending from the first surface into the substrate, wherein the conductive feature comprises: a conductive pad extending over the first surface of the substrate, wherein the conductive pad comprises a substantially planar top surface opposite the substrate; anda conductive bump contacting the conductive pad, wherein the conductive bump comprises a non-planar top surface over the substantially planar top surface, and wherein the conductive bump and the conductive pad are formed of a same material.
地址 Hsin-Chu TW
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