发明名称 |
TSV structures and methods for forming the same |
摘要 |
A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad. |
申请公布号 |
US9373575(B2) |
申请公布日期 |
2016.06.21 |
申请号 |
US201514607865 |
申请日期 |
2015.01.28 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Yung-Chi;Chen Hsin-Yu;Chiou Wen-Chih;Yang Ku-Feng;Wu Tsang-Jiuh;Lin Jing-Cheng |
分类号 |
H01L23/48;H01L23/498;H01L21/768;H01L23/00 |
主分类号 |
H01L23/48 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A device comprising:
a substrate comprising a first surface and a second surface under the first surface; a conductive feature extending from the first surface into the substrate, wherein the conductive feature comprises:
a conductive pad extending over the first surface of the substrate, wherein the conductive pad comprises a substantially planar top surface opposite the substrate; anda conductive bump contacting the conductive pad, wherein the conductive bump comprises a non-planar top surface over the substantially planar top surface, and wherein the conductive bump and the conductive pad are formed of a same material. |
地址 |
Hsin-Chu TW |