| 摘要 |
PURPOSE:To ensure an assured conduction with only the voltage less than the fixed level and then to secure a compact formation of the switching element with a reduced number of the component parts by supplying the current to the gate of the thyristor via FET. CONSTITUTION:Drain D of N-channel FET (P-channel FET in the case of N gate- type thyristor TH) is connected to P gate-type TH (or N gate-type TH) anode A (cathode K in the case of N gate-type TH), and gate GF of FET is connected to cathode K of P gate-type TH (anode A in the case of N gate-type TH). And the gate current is supplied to gate G of P gate-type TH (or N gate-type TH) via FET. As a result, an assured conduction is secured only with the voltage less than the fixed level, ensuring a compact formation of the switching element with a reduced number of the component parts. |
