SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

摘要

A substrate processing apparatus includes a rotary table arranged in a vacuum chamber, a first reaction gas supply unit that supplies a first reaction gas to a surface of the rotary table, a second reaction gas supply unit that is arranged apart from the first reaction gas supply unit that supplies a second reaction gas, which reacts with the first reaction gas, to the rotary table surface, an activated gas supply unit that is arranged apart from the first and second reaction gas supply units and includes a discharge unit that supplies an activated etching gas to the rotary table surface, and a plurality of purge gas supply units that are provided near the discharge unit for supplying a purge gas to the rotary table surface. A flow rate of the purge gas supplied from each of the purge gas supply units can be independently controlled.

主权项

1. A substrate processing apparatus comprising:
a vacuum chamber; a rotary table that is rotatably arranged in the vacuum chamber to hold a substrate; a first reaction gas supply unit that supplies a first reaction gas to a surface of the rotary table; a second reaction gas supply unit that is arranged apart from the first reaction gas supply unit in a circumferential direction of the rotary table and supplies a second reaction gas, which reacts with the first reaction gas, to the surface of the rotary table; an activated gas supply unit that is arranged apart from the first reaction gas supply unit and the second reaction gas supply unit in the circumferential direction of the rotary table, the activated gas supply unit including a discharge unit having a discharge hole through which an etching gas that has been activated is supplied to the surface of the rotary table; and a plurality of purge gas supply units that are provided near the discharge hole with respect to the circumferential direction of the rotary table and supply a purge gas to the surface of the rotary table; wherein a flow rate of the purge gas supplied from each of the plurality of purge gas supply units can be independently controlled.