发明名称 Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
摘要 Three-dimensional structures having a suitable geometrical configuration are directly formed on one major surface of a substrate so that an epitaxial molecular beam may be incident on preselected regions, and the angles of incidence of epitaxial molecular beams are varied. As a result the arrival rates of molecular beams are varied from one region to another on the substrate so that a three-dimensional epitaxial layer in which the physical properties are different from one region of a submicron across to another may be grown.
申请公布号 US4171234(A) 申请公布日期 1979.10.16
申请号 US19770815303 申请日期 1977.07.13
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO LTD 发明人 FUKAI, MASAKAZU;NAGATA, SEIICHI;TANAKA, TSUNEO
分类号 C30B23/02;C30B23/04;H01L21/203;(IPC1-7):H01L21/20;H01L29/06 主分类号 C30B23/02
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