SEMICONDUCTOR PRESSURE CONVERTER

摘要

PURPOSE:To increase both the anti-environmnt and electric insulation performance by laminating the metal thin film of a high conductivity to the protective film provided on the diaphragm and then bonding the cover component via the anode coupling method. CONSTITUTION:The p-type gage resistance 2 is formed on one surface of n-type Si diaphragm 1 with Al electrode 3 deposited at one end. Si thin film 5 is deposited to SiO2 protective film 4 on the diaphragm 4 except for the electrode part. As thin film 4 is held between Si, the initial strain of the diaphragm caused by the heat expansion coefficient difference can be reduced to increase the temperature characteristics of the reference point. Then airtight chamber 6 is formed through the anode coupling by applying the high voltage in the high-voltage vacuum atmosphere with film 5 used as the anode and BSG-made cover component 7 containing the bottomed hole and electrode hole 8 used at the cathode respectively. Then the ultrasonic junction of gold wire 9 is given to hole 8 to secure resin sealing 10. And BSG-made pipe 11 of the same matterial as component 7 is bonded to the opposite side to resistance 2 via the anode coupling method to form the pressure introduction part. Gold wire 9 is connected to operation amplifier 14 via secondary substrate 12, lead frame 13 and main substrate 15, and terminal 17 is attached to the main substrate.