| 摘要 |
PURPOSE:To prevent the reduction of the projection (hillock), the lowering of the flitting voltage and the occurrence of the electromigration each by doping the boron to the Al wiring layer. CONSTITUTION:SiO2 film 12 is formed on Si substrate 10, and 1st wiring layer 14 composed of Al is formed on film 12. Then inter-layer insulator film 16 is formed as if it covered over layer 14 and film 12, and contact hole 16A is drilled to expose the contact scheduled area on layer 14. And 2nd wiring layer 18 composed of Al is formed on film 16, and part of layer 18 forms layer 14 and ohmic contact part CNT1 via hole 16A. Then passivation film 20 is covered over layer 18 and film 16, and opening part 20A is formed to expose bonding pad part 18A to give bonding to the bonding wire. In such constitution, boron-rich Al layer 14a and 18a are formed on the surfaces of layer 14 and 18 except for part 18A. As a result, a wiring structure is obtained with high reliability and high stability. |
