| 摘要 |
PURPOSE:To shorten vacuum deposition time; elongate the life of an evaporation source; and enhance productivity in vacuum deposition of silicon, etc. by forming a C or C-contg. layer along the inside of a heating source coated with oxide, nitride, etc. CONSTITUTION:Coiled heating source 1 is coated with oxide 3 of Al, etc. to form crucible 30, and carbon layer 4 is formed along the inner wall of crucible 30 to constitute an evaporation source. Layer 4 is obtd. by heat burning petroleum coke, coal, etc. and it is 0.2-1 mm in thickness. Molten silicon closely contacts to layer 4 in a wet state without becoming spherical, so it is effectively heated to shorten vacuum deposition time. Conventional time of 5 hr was reduced to 5 min. Reaction of silicon and source 1 is inhibited to elongate the life of source 1, thus enhancing productivity. |
