| 摘要 |
PURPOSE:To enhance the degree of integration as well as to reduce the transfer loss for the charge-coupled device by forming the transfer electrode with the single electrode and then trimming the thick part of the oxide film under the electrode and the end of the impurity layer at the one end of the transfer electrode. CONSTITUTION:SiO2 8 on Si substrate 6 is ethced with Si3N4 mask 7 to form films 8A-8C and then covered with siO2 9, and impurity ion injection layer 11 which is the same type as the substrate is provided via resist mask 10. Then the resist is removed and phosphrous-added poly Si 12 is formed selectively and thus to form transfer electrode 12A and 12B with oxide film 13 formed on the surface. After this, film 7 is removed by etching and then projection part 14A, 14A', 15B and 15B' are removed by etching, and average electrode 12 is formed. Then resist mask 16 is formed selectively to etch film 8. Mask 16 is then removed and the exposed substrate surface is covered with SiO2 17 to form electrode 19 selectively. In this constitution, the charge can be transferred with the double-phase clock pulse and via the single electrode owing to existence of layer 11 and film 8, thus enhancing the degree of integration with the extremely reduced transfer loss. |
