| 摘要 |
PURPOSE:To establish the suitable amplifier for the circuit requiring low power consumption, by connecting the Zener element between the drain of p channel IGFET and the drain of n channel IGFET. CONSTITUTION:The source of the first p channel IGFET 11 is connected to +VDD, and the drain is connected to the source of the second p channel IGFET 31. Further, the source of the first n channel IGFET 12 is connected to GND and the drain is connected to source of the second IGFET 32. Further, the drain of IGFET 31 and 32 is connected and the junction point is taken as the output terminal OUT. Moreover, the input terminal IN and the output terminal OUT are connected via the bias resistor 13. Taking the threshold voltage of IGFET 31 and 32 as VT31 and VT32, the output voltage is saturated at VDD-VT31 and VT32 level. Accordingly, when the amplifier is used for a crystal oscillation circuit, it stops when the output amplitude of the amplifier is VDD-VT31-VT32 and keeps oscillation with small amplitude. |
