| 摘要 |
PURPOSE:To improve the efficiency of electric charge pump by laminating an insulation film and gate electrode of more than 10<6>OMEGA of layer resistance on a semiconductor substrate and applying pulse voltage to a portion of resistive layer. CONSTITUTION:On P type substrate 10, heat oxidized membrane 9 is formed, N type source 11 is provided and layer 19 with affixed gold or others with deep trap order is provided. Also provided in membrance 9 is gate electrode 15 of a high resistance which overlaps the entire area of layer 19 and a portion of layer 11 in parallel. The resistance of layer 15 is increased to more than 10<6>OMEGA by charging ions in polycrystalline Si. The thickness of membrane 12 directly under layer 15 is arranged to approximately 1000Angstrom . Electrode 14 is provided on end 20 of layer 15 near the source. With this constitution, when selection is made in such a way that the relation between time constant r of pulse voltage signal which propagates from electrode 14 through gate electrode 15 and the descending time T of pulse voltage becomes r>=T, the electric charge remaining under the gate electrode is increased, thus improving the efficiency of electric charge pump. |
