| 摘要 |
<p>PURPOSE:To evade the slide and the bonding-open of an Al electrode pad, and obtain a highly reliable semiconductor device having large resistance to thermal stress, by constituting the pad electrode of an LSI chip in the form of a polygon or a circle. CONSTITUTION:The shape of the pad electrode 3 of an LSI chip is made either a polygon whose interior angle is larger than or equal to 90 deg. or a circle. Further, for example, the pad aperture part 2 of a polyimide coated protecting film is made either a polygon whose interior angle is larger than or equal to 90 deg. or a circle, and made to have the same size as the pad electrode 3 or have a different size from the pad electrode 3. Thereby, the corner part of the electrode pad is eliminated, and the side of the pad vertical to the direction of stress (i.e., vertical direction to the chip periphery) does not exist, so that the resin stress can be relieved. As a result, a highly reliable semiconductor device, wherein Al slide and bonding-open do not generate, can be obtained.</p> |
