发明名称 FORMING METHOD FOR HIGH MELTING POINT METAL THIN FILM
摘要 PURPOSE:To easily obtain an electrical contact point, etc. by dispersing high m.p. metal particles in a low m.p. metal and melting the low m.p. metal by heating to deposit it on a substrate, thereby binding the particles to the substrate to form a thin film. CONSTITUTION:A mixt. of high m.p. metal particles 1 such as Re and low m.p. metal particles 2 such as gold is mounted on substrate 3 and heated with laser beam, etc. for a short time to melt particles 2 alone, thus forming a worked product consisting of low m.p. and high m.p. metals. Particles 1 are then exposed to the product surface by spray polishing, etc. By this method a high m.p. metal thin film can be formed on substrate 3 in a short time.
申请公布号 JPS54110138(A) 申请公布日期 1979.08.29
申请号 JP19780016620 申请日期 1978.02.17
申请人 NIPPON TELEGRAPH & TELEPHONE 发明人 FUJIMORI SUSUMU;TAKEI KOUJI;NAGAI KAZUTOSHI
分类号 C23C24/10 主分类号 C23C24/10
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