发明名称 Separate confinement semiconductor heterostructure laser - with narrowly spaced optically coupled stripes to improve resolution
摘要 <p>Injection laser has a semiconductor heterostructure and a strip geometry for the electrically active region. The region, which includes a pn-heterojunction, is divided into a number of optically coupled, parallel, closely spaced stripes provided with a light output face terminated pn-junction. Used esp. in Separate Confinement Heterostructure (SCH) lasers. A very small threshold current is sufficient to effect emission at a small angle of diversion.</p>
申请公布号 DE2804371(A1) 申请公布日期 1979.08.09
申请号 DE19782804371 申请日期 1978.02.02
申请人 LICENTIA PATENT-VERWALTUNGS-GMBH 发明人 BENEKING,HEINZ,PROF.DR.RER.NAT.
分类号 H01S5/40;(IPC1-7):01S3/19 主分类号 H01S5/40
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