发明名称 |
Separate confinement semiconductor heterostructure laser - with narrowly spaced optically coupled stripes to improve resolution |
摘要 |
<p>Injection laser has a semiconductor heterostructure and a strip geometry for the electrically active region. The region, which includes a pn-heterojunction, is divided into a number of optically coupled, parallel, closely spaced stripes provided with a light output face terminated pn-junction. Used esp. in Separate Confinement Heterostructure (SCH) lasers. A very small threshold current is sufficient to effect emission at a small angle of diversion.</p> |
申请公布号 |
DE2804371(A1) |
申请公布日期 |
1979.08.09 |
申请号 |
DE19782804371 |
申请日期 |
1978.02.02 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
BENEKING,HEINZ,PROF.DR.RER.NAT. |
分类号 |
H01S5/40;(IPC1-7):01S3/19 |
主分类号 |
H01S5/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|