| 摘要 |
PURPOSE:To evade the deterioration of a luminous element by fixing a pellet formed of a semiconductor wafer to a metal stem, glass substrate, ceramic substrate, etc., by using metal solder and by removing a damage part at the circumference of the pellet by etching after wiring. CONSTITUTION:On N<+>-type GaAs substrate, a N-type GaAs layer is grown, a P- type GaAs layer is adhered onto the layer to obtain luminous element 1, and Au-Zn electrode 2 and Au-Ge electrode 3 are fitted to the P-type layer and N<+>-type layer respectively. Next, this wafer is scribed by a diamond scriber and then cracked by a roller into pellets. Then, this is fusion-welded onto metal header 5 by Au-Si eutectic solder 4 and electrode 2 and the lead are connected via Au line 8. Next, this assembled body is dipped for 10 to 30 minutes in an etching solution obtained by mixing bromine with methyl alcohol by 5 to 10 volume% to etch the pellet surface by several to tens mum. Consequently, the deterioration after a current is fed for 1000 hours is between only 2.5 and 10%. |
