| 摘要 |
PURPOSE:To simplify the mask formation by injecting the metal ion of W, Mo and the like into the Cr or Cr2O3 film covered with the resist film and then giving the inverse etching to the area coated with the resist. CONSTITUTION:Cr film 2 and resist 3 are laminated on glass plate 1 to form a pattern through the exposure and development. Then the metal ion of W, Mo, iron, copper and the like is injected about several tens Angstrom onto the surface of film 2. After this, resist 3 is removed, and film 2 is etched through the plasma etching with use of the mixture gas of the halogen element and O2. Thus, region 2a with no ion injection given is removed selectively. With this method, the etching is reduced for the side surface and the minute processing can be given even to the resist featuring a large amount of film reduction. As a result, the removing process of the resist film can be omitted. |
