| 摘要 |
PURPOSE:To reduce the parasitic capacity by forming the small and shallow source and drain for E- and D-type FET's on the substrate and thus to increase the response velocity through formation of the electrode via the lead-out layer. CONSTITUTION:Both the ion injection and the partial oxidation are carried out on the oxide film of P-type Si substrate 61 to form P<+>-layer 99 and oxide film 63, and then Al2O3138, Si3N4139, SiO2140 and N-type doped poly Si141 are laminated. Window 149 and 150 are provided by etching via SiO2 mask 145, and then Si layer 152 is coated to drill window 160 and 161 through etching. Then N-type doped poly Si163 is coated, and layer 152 is lifted off. Oxide films 84-86 are formed through oxidation to then form N-layers 91-94, and surface oxide film 97 and 98 are exposed through etching by masks 84-86. Then P<+>-type ion injection layer 95 and 96 are formed through the film. Openings 100-102 are drilled selectively to oxide films 84-86 finally with the electrode attached. In such constitution, N-layers 91-94 can be formed small and shallow, so that parasitic capacity can be reduced. |
