发明名称 |
Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat |
摘要 |
A semiconductor device includes a semiconductor substrate and a silicon carbide film formed in direct contact with the surface of the semiconductor substrate. The silicon carbide film may have a proper purity or include at least one element selected from the group consisting of hydrogen, oxygen, nitrogen, helium, argon or chlorine. |
申请公布号 |
US4161743(A) |
申请公布日期 |
1979.07.17 |
申请号 |
US19780915541 |
申请日期 |
1978.06.14 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO LTD |
发明人 |
AJIMA, TAKASHI;UCHIDA, MASATO;YONEZAWA, TOSHIO |
分类号 |
H01L21/314;H01L21/316;H01L23/29;H01L23/31;(IPC1-7):H01L29/34 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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