发明名称 |
Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers |
摘要 |
A p-n junction type solid-state element having at least a pair of p-n junction type semiconductor layers formed of a p-type semiconductor and an n-type semiconductor joined with each other and a method of producing the same, in which the p-type semiconductor and n-type semiconductor are formed and joined by forming at least one of the semiconductors using what is called the ionized-cluster-beam deposition process which evaporates a material to be deposited to form a vapor, injects the vapor into a vacuum region to form clusters of atoms, ionizes the clusters and electrically accelerates ionized clusters onto a substrate thereby forming a layer thereon.
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申请公布号 |
US4161418(A) |
申请公布日期 |
1979.07.17 |
申请号 |
US19780908748 |
申请日期 |
1978.05.23 |
申请人 |
FUTABA DENSHI KOGYO K.K. |
发明人 |
MORIMOTO, KIYOSHI;TAKAGI, TOSHINORI;UTAMURA, YUKIHIKO |
分类号 |
C30B23/08;H01L21/203;H01L21/363;H01L29/04;H01L31/0224;H01L31/18;(IPC1-7):H01L21/20;C23C15/00 |
主分类号 |
C30B23/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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