发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent performance down dependent upon RF interrupt even if the number of RF times is increased, by constituting a memory by plural storage modules which require refresh RF operation, a RF control circuit and an access control circuit. CONSTITUTION:When access request signal e is received from CPU 10, one of read/ write operation designation signals f and g is selected in access control circuit 16, and the read/write operation is executed in either of storage modules 14 and 15. When RF request signal n is generated, access control circuit 17 collates whether least significant bit d of the read/write operation and the least significant bit of the RF address agree with each other or not; and only in case of disagreement, a storage module where the read/write operation is not executed is selected. When the RF operation is not executed within a fixed period even if signal n is generated, forced RF request signal 0 is outputted from circuit 16 to execute forcedly the RF operation after the completion of the read/write operation, and signal e from CPU is inhibited during the RF operation. Thus, performance is not lowered even in case of RF interrupt.
申请公布号 JPS5489442(A) 申请公布日期 1979.07.16
申请号 JP19770156387 申请日期 1977.12.27
申请人 NIPPON ELECTRIC CO 发明人 SATOU HITOSHI
分类号 G11C11/406 主分类号 G11C11/406
代理机构 代理人
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